Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors

Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors

Channel shape dependency on device instability for amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various channel shape devices along with systematic electrical characterization including DC I-V characeristics and bias temperature stress tests. a-I...

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Bibliographic Details
Main Authors: Seung Gi Seo, Seung Jae Yu, Seung Yeob Kim, Jinheon Jeong, Sung Hun Jin
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Micromachines
Subjects:
InGaZnO
thin-film transistor
instability
channel shape
electric field
Online Access:https://www.mdpi.com/2072-666X/12/1/2

Internet

https://www.mdpi.com/2072-666X/12/1/2

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