Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors
Channel shape dependency on device instability for amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various channel shape devices along with systematic electrical characterization including DC I-V characeristics and bias temperature stress tests. a-I...
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| Format: | Article |
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MDPI AG
2020-12-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/1/2 |
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| author | Seung Gi Seo Seung Jae Yu Seung Yeob Kim Jinheon Jeong Sung Hun Jin |
| author_facet | Seung Gi Seo Seung Jae Yu Seung Yeob Kim Jinheon Jeong Sung Hun Jin |
| author_sort | Seung Gi Seo |
| collection | DOAJ |
| description | Channel shape dependency on device instability for amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various channel shape devices along with systematic electrical characterization including DC I-V characeristics and bias temperature stress tests. a-IGZO TFTs with various channel shapes such as zigzag, circular, and U-type channels are implemented and their vertical and lateral electric field stress (E-field) effects are systematically tested and analyzed by using an experimental and modeling study. Source and drain (S/D) electrode asymmetry and vertical E-field effects on device instability are neglibible, whereas the lateral E-field effects significantly affect device instability, particularly for zigzag channel shape, compared to circular and U-type TFTs. Moreover, charge trapping time (<i>τ</i>) for zigzag-type a-IGZO TFTs is extracted as 3.8 × 10<sup>4</sup>, which is at least three-times smaller than those of other channel-type a-IGZO TFTs, hinting that local E-field enhancement can critically affect the device reliability. The Technology Computer Aided Design (TCAD) simulation results reveal the locally enhanced E-field at both corner region in the channel in a quantitative mode and its correlation with hemisphere radius (<i>ρ</i>) values. |
| first_indexed | 2024-03-10T13:51:59Z |
| format | Article |
| id | doaj.art-18de5635bdc94ef392cb812925f09ed0 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T13:51:59Z |
| publishDate | 2020-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-18de5635bdc94ef392cb812925f09ed02023-11-21T02:02:01ZengMDPI AGMicromachines2072-666X2020-12-01121210.3390/mi12010002Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film TransistorsSeung Gi Seo0Seung Jae Yu1Seung Yeob Kim2Jinheon Jeong3Sung Hun Jin4Department of Electronic Engineering, Incheon National University, Incheon 406-772, KoreaDepartment of Electronic Engineering, Incheon National University, Incheon 406-772, KoreaDepartment of Electronic Engineering, Incheon National University, Incheon 406-772, KoreaDepartment of Electronic Engineering, Incheon National University, Incheon 406-772, KoreaDepartment of Electronic Engineering, Incheon National University, Incheon 406-772, KoreaChannel shape dependency on device instability for amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various channel shape devices along with systematic electrical characterization including DC I-V characeristics and bias temperature stress tests. a-IGZO TFTs with various channel shapes such as zigzag, circular, and U-type channels are implemented and their vertical and lateral electric field stress (E-field) effects are systematically tested and analyzed by using an experimental and modeling study. Source and drain (S/D) electrode asymmetry and vertical E-field effects on device instability are neglibible, whereas the lateral E-field effects significantly affect device instability, particularly for zigzag channel shape, compared to circular and U-type TFTs. Moreover, charge trapping time (<i>τ</i>) for zigzag-type a-IGZO TFTs is extracted as 3.8 × 10<sup>4</sup>, which is at least three-times smaller than those of other channel-type a-IGZO TFTs, hinting that local E-field enhancement can critically affect the device reliability. The Technology Computer Aided Design (TCAD) simulation results reveal the locally enhanced E-field at both corner region in the channel in a quantitative mode and its correlation with hemisphere radius (<i>ρ</i>) values.https://www.mdpi.com/2072-666X/12/1/2InGaZnOthin-film transistorinstabilitychannel shapeelectric field |
| spellingShingle | Seung Gi Seo Seung Jae Yu Seung Yeob Kim Jinheon Jeong Sung Hun Jin Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors Micromachines InGaZnO thin-film transistor instability channel shape electric field |
| title | Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors |
| title_full | Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors |
| title_fullStr | Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors |
| title_full_unstemmed | Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors |
| title_short | Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors |
| title_sort | channel shape effects on device instability of amorphous indium gallium zinc oxide thin film transistors |
| topic | InGaZnO thin-film transistor instability channel shape electric field |
| url | https://www.mdpi.com/2072-666X/12/1/2 |
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