Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO<sub>2</sub> gate dielectric layer. T...

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Bibliographic Details
Main Authors: Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Nanomaterials
Subjects:
GaN
SiN
HfO<sub>2</sub>
gate insulator
MIS-HEMT
total ionizing dose effect
Online Access:https://www.mdpi.com/2079-4991/10/11/2175

Internet

https://www.mdpi.com/2079-4991/10/11/2175

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