Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique

Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique

We developed a low-temperature ohmic contact formation process for N-polar GaN surfaces. Specific-contact-resistances of 9.4 × 10 ^−5 and 2.0 × 10 ^−5 Ω cm ^2 were obtained using Ti/Al metal stacks on heavily-germanium-doped GaN films, which were deposited at 500 °C and 600 °C using a radical-assist...

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Bibliographic Details
Main Authors: Shinji Yamada, Masanori Shirai, Hiroki Kobayashi, Manabu Arai, Tetsu Kachi, Jun Suda
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Applied Physics Express
Subjects:
GaN
sputtering
dope
resistance
concentration
TLM
Online Access:https://doi.org/10.35848/1882-0786/ad2783

Internet

https://doi.org/10.35848/1882-0786/ad2783

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