Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaO<i><sub>x</sub></i>/ITO Device
In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaO<i><sub>x</sub></i>/indium tin oxide (ITO) memristor device. The intrinsic switching of TaO<i><sub>x</sub></i> is preferred when a...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-09-01
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| Series: | Metals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2075-4701/11/10/1531 |