Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaO<i><sub>x</sub></i>/ITO Device

Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaO<i><sub>x</sub></i>/ITO Device

In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaO<i><sub>x</sub></i>/indium tin oxide (ITO) memristor device. The intrinsic switching of TaO<i><sub>x</sub></i> is preferred when a...

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Bibliographic Details
Main Authors: Hojeong Ryu, Beomjun Park, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Metals
Subjects:
memristor
threshold switching
resistive switching memory
metal oxides
Online Access:https://www.mdpi.com/2075-4701/11/10/1531

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