DC-38GHz Nonuniform Distributed Amplifier Design with Gate and Drain Line Optimization Using 0.1µm GaAs pHEMT Technology

DC-38GHz Nonuniform Distributed Amplifier Design with Gate and Drain Line Optimization Using 0.1µm GaAs pHEMT Technology

This paper presents an optimized three-cell Nonuniform Distributed Amplifier (NUDA) suitable for optoelectronic drivers in the Q band. This is the first NUDA of Darlington topology designed with the 0.1µm GaAs pHEMT process with a transition frequency fT of 130GHz. Gate microstrip line sections, dra...

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Bibliographic Details
Main Authors: Balla Lakshmi, Gollakota Venkata Krishna Sharma
Format: Article
Language:English
Published: D. G. Pylarinos 2023-06-01
Series:Engineering, Technology & Applied Science Research
Subjects:
Monolithic Microwave Integrated Circuit (MMIC)
Distributed Amplifier (DA)
pseudomorphic High Electron Mobility Transistor (pHEMT)
Gallium Arsenide (GaAs)
ant colony optimization
Nonuniform Distributed Amplifier (NUDA)
Online Access:https://etasr.com/index.php/ETASR/article/view/5859

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https://etasr.com/index.php/ETASR/article/view/5859

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