MoS<sub>2</sub> Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness

MoS<sub>2</sub> Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness

Molybdenum disulfide (MoS<sub>2</sub>) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barr...

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Bibliographic Details
Main Authors: Jinbing Cheng, Junbao He, Chunying Pu, Congbin Liu, Xiaoyu Huang, Deyang Zhang, Hailong Yan, Paul K. Chu
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Series:Energies
Subjects:
MoS<sub>2</sub>
TiO<sub>2</sub>
Schottky barrier
contact resistance
Online Access:https://www.mdpi.com/1996-1073/15/17/6169

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https://www.mdpi.com/1996-1073/15/17/6169

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