MoS<sub>2</sub> Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness
Molybdenum disulfide (MoS<sub>2</sub>) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barr...
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| Format: | Article |
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MDPI AG
2022-08-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/15/17/6169 |
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| author | Jinbing Cheng Junbao He Chunying Pu Congbin Liu Xiaoyu Huang Deyang Zhang Hailong Yan Paul K. Chu |
| author_facet | Jinbing Cheng Junbao He Chunying Pu Congbin Liu Xiaoyu Huang Deyang Zhang Hailong Yan Paul K. Chu |
| author_sort | Jinbing Cheng |
| collection | DOAJ |
| description | Molybdenum disulfide (MoS<sub>2</sub>) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barrier height (<i>Φ<sub>B</sub></i>) and contact resistance are obstacles hampering the fabrication of high-power MoS<sub>2</sub> transistors. The electronic transport characteristics of MoS<sub>2</sub> transistors with two different contact structures are investigated in detail, including a copper (Cu) metal–MoS<sub>2</sub> channel and copper (Cu) metal–TiO<sub>2</sub>-MoS<sub>2</sub> channel. Contact optimization is conducted by adjusting the thickness of the TiO<sub>2</sub> interlayer between the metal and MoS<sub>2</sub>. The metal-interlayer-semiconductor (MIS) structure with a 1.5 nm thick TiO<sub>2</sub> layer has a smaller Schottky barrier of 22 meV. The results provide insights into the engineering of MIS contacts and interfaces to improve transistor characteristics. |
| first_indexed | 2024-03-10T01:52:37Z |
| format | Article |
| id | doaj.art-1996865facbb4157ab110d831cee6e49 |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-03-10T01:52:37Z |
| publishDate | 2022-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-1996865facbb4157ab110d831cee6e492023-11-23T13:01:28ZengMDPI AGEnergies1996-10732022-08-011517616910.3390/en15176169MoS<sub>2</sub> Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer ThicknessJinbing Cheng0Junbao He1Chunying Pu2Congbin Liu3Xiaoyu Huang4Deyang Zhang5Hailong Yan6Paul K. Chu7Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, ChinaHenan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, ChinaHenan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, ChinaHenan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, ChinaHenan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, ChinaKey Laboratory of Microelectronics and Energy of Henan Province, Engineering Research Center for MXene Energy Storage Materials of Henan Province, Henan Joint International Research Laboratory of New Energy Storage Technology, Xinyang Normal University, Xinyang 464000, ChinaKey Laboratory of Microelectronics and Energy of Henan Province, Engineering Research Center for MXene Energy Storage Materials of Henan Province, Henan Joint International Research Laboratory of New Energy Storage Technology, Xinyang Normal University, Xinyang 464000, ChinaDepartment of Physics, Department of Materials Science & Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, ChinaMolybdenum disulfide (MoS<sub>2</sub>) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barrier height (<i>Φ<sub>B</sub></i>) and contact resistance are obstacles hampering the fabrication of high-power MoS<sub>2</sub> transistors. The electronic transport characteristics of MoS<sub>2</sub> transistors with two different contact structures are investigated in detail, including a copper (Cu) metal–MoS<sub>2</sub> channel and copper (Cu) metal–TiO<sub>2</sub>-MoS<sub>2</sub> channel. Contact optimization is conducted by adjusting the thickness of the TiO<sub>2</sub> interlayer between the metal and MoS<sub>2</sub>. The metal-interlayer-semiconductor (MIS) structure with a 1.5 nm thick TiO<sub>2</sub> layer has a smaller Schottky barrier of 22 meV. The results provide insights into the engineering of MIS contacts and interfaces to improve transistor characteristics.https://www.mdpi.com/1996-1073/15/17/6169MoS<sub>2</sub>TiO<sub>2</sub>Schottky barriercontact resistance |
| spellingShingle | Jinbing Cheng Junbao He Chunying Pu Congbin Liu Xiaoyu Huang Deyang Zhang Hailong Yan Paul K. Chu MoS<sub>2</sub> Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness Energies MoS<sub>2</sub> TiO<sub>2</sub> Schottky barrier contact resistance |
| title | MoS<sub>2</sub> Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness |
| title_full | MoS<sub>2</sub> Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness |
| title_fullStr | MoS<sub>2</sub> Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness |
| title_full_unstemmed | MoS<sub>2</sub> Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness |
| title_short | MoS<sub>2</sub> Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness |
| title_sort | mos sub 2 sub transistors with low schottky barrier contact by optimizing the interfacial layer thickness |
| topic | MoS<sub>2</sub> TiO<sub>2</sub> Schottky barrier contact resistance |
| url | https://www.mdpi.com/1996-1073/15/17/6169 |
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