The Effect of Dislocation and Interface-Roughness Scattering on Electron Mobility in the MgZnO/ZnO Heterostructure
In this work, the electron mobility in the MgZnO/ZnO heterostructure at room temperature is theoretically studied by considering interface roughness (IFR), dislocation (DIS), and polar optical phonon (POP) scattering. Analytical formulae are introduced to calculate the critical thickness and disloca...
| Prif Awdur: | |
|---|---|
| Fformat: | Erthygl |
| Iaith: | English |
| Cyhoeddwyd: |
Hindawi Limited
2022-01-01
|
| Cyfres: | Advances in Materials Science and Engineering |
| Mynediad Ar-lein: | http://dx.doi.org/10.1155/2022/2770047 |