Degradation state analysis of the IGBT module based on apparent junction temperature
Abstract The multi-chip parallel insulated gate bipolar transistor (IGBT) is the core device in large-capacity power electronic equipment, but its operational reliability is of considerable concern to industry. The application of IGBT online degradation state analysis technology can be beneficial to...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2023-10-01
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| Series: | Protection and Control of Modern Power Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s41601-023-00327-5 |