Degradation state analysis of the IGBT module based on apparent junction temperature
Abstract The multi-chip parallel insulated gate bipolar transistor (IGBT) is the core device in large-capacity power electronic equipment, but its operational reliability is of considerable concern to industry. The application of IGBT online degradation state analysis technology can be beneficial to...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2023-10-01
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| Series: | Protection and Control of Modern Power Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s41601-023-00327-5 |
| _version_ | 1797647239484538880 |
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| author | Guoqing Xu Lingfeng Shao Xiaoyan Xu Shen Li |
| author_facet | Guoqing Xu Lingfeng Shao Xiaoyan Xu Shen Li |
| author_sort | Guoqing Xu |
| collection | DOAJ |
| description | Abstract The multi-chip parallel insulated gate bipolar transistor (IGBT) is the core device in large-capacity power electronic equipment, but its operational reliability is of considerable concern to industry. The application of IGBT online degradation state analysis technology can be beneficial to the improvement of system reliability. The failure mechanism of IGBT devices is discussed in this paper, and a technique for analyzing the degradation state of IGBT based on apparent junction temperature is proposed. First, the distortion consistency of the voltage rise time in various failures is discussed, and the junction temperature dependence of the voltage rise time is then demonstrated. Subsequently, an apparent junction temperature model based on the voltage rise time is established (the fitting accuracy is as high as 94.3%). From the high-frequency model in the switching process of the device, an online extraction technology of key parameters (e.g., voltage rise time) is developed. Finally, an experimental platform for IGBT degradation state estimation is established, and the feasibility of IGBT degradation state estimation based on apparent junction temperature is proved, especially the degradation of bonding-wire and the gate-oxide-layer. The experimental results show that the proposed IGBT degradation state estimation technique based on apparent junction temperature is a reliable online estimation method with non-contact, high accuracy, and comprehensiveness. |
| first_indexed | 2024-03-11T15:14:28Z |
| format | Article |
| id | doaj.art-19d7c8fcca94443884239ba67d68e9ea |
| institution | Directory Open Access Journal |
| issn | 2367-2617 2367-0983 |
| language | English |
| last_indexed | 2024-03-11T15:14:28Z |
| publishDate | 2023-10-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Protection and Control of Modern Power Systems |
| spelling | doaj.art-19d7c8fcca94443884239ba67d68e9ea2023-10-29T12:27:17ZengSpringerOpenProtection and Control of Modern Power Systems2367-26172367-09832023-10-018111410.1186/s41601-023-00327-5Degradation state analysis of the IGBT module based on apparent junction temperatureGuoqing Xu0Lingfeng Shao1Xiaoyan Xu2Shen Li3School of Mechatronic Engineering and Automation, Shanghai UniversitySchool of Mechatronic Engineering and Automation, Shanghai UniversitySchool of Mechatronic Engineering and Automation, Shanghai UniversitySchool of Mechatronic Engineering and Automation, Shanghai UniversityAbstract The multi-chip parallel insulated gate bipolar transistor (IGBT) is the core device in large-capacity power electronic equipment, but its operational reliability is of considerable concern to industry. The application of IGBT online degradation state analysis technology can be beneficial to the improvement of system reliability. The failure mechanism of IGBT devices is discussed in this paper, and a technique for analyzing the degradation state of IGBT based on apparent junction temperature is proposed. First, the distortion consistency of the voltage rise time in various failures is discussed, and the junction temperature dependence of the voltage rise time is then demonstrated. Subsequently, an apparent junction temperature model based on the voltage rise time is established (the fitting accuracy is as high as 94.3%). From the high-frequency model in the switching process of the device, an online extraction technology of key parameters (e.g., voltage rise time) is developed. Finally, an experimental platform for IGBT degradation state estimation is established, and the feasibility of IGBT degradation state estimation based on apparent junction temperature is proved, especially the degradation of bonding-wire and the gate-oxide-layer. The experimental results show that the proposed IGBT degradation state estimation technique based on apparent junction temperature is a reliable online estimation method with non-contact, high accuracy, and comprehensiveness.https://doi.org/10.1186/s41601-023-00327-5Degradation state analysisApparent junction temperatureVoltage rise timeHigh-frequency model |
| spellingShingle | Guoqing Xu Lingfeng Shao Xiaoyan Xu Shen Li Degradation state analysis of the IGBT module based on apparent junction temperature Protection and Control of Modern Power Systems Degradation state analysis Apparent junction temperature Voltage rise time High-frequency model |
| title | Degradation state analysis of the IGBT module based on apparent junction temperature |
| title_full | Degradation state analysis of the IGBT module based on apparent junction temperature |
| title_fullStr | Degradation state analysis of the IGBT module based on apparent junction temperature |
| title_full_unstemmed | Degradation state analysis of the IGBT module based on apparent junction temperature |
| title_short | Degradation state analysis of the IGBT module based on apparent junction temperature |
| title_sort | degradation state analysis of the igbt module based on apparent junction temperature |
| topic | Degradation state analysis Apparent junction temperature Voltage rise time High-frequency model |
| url | https://doi.org/10.1186/s41601-023-00327-5 |
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