Electromechanically Induced GHz Rate Optical Frequency Modulation in Silicon

Electromechanically Induced GHz Rate Optical Frequency Modulation in Silicon

We present a monolithic silicon acousto-optic frequency modulator (AOFM) operating at 1.09 GHz. Direct spectroscopy of the modulated laser power shows asymmetric sidebands, which indicate coincident amplitude modulation and frequency modulation (FM). Employing mechanical levers to enhance the displa...

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Bibliographic Details
Main Authors: S. Tallur, S. A. Bhave
Format: Article
Language:English
Published: IEEE 2012-01-01
Series:IEEE Photonics Journal
Subjects:
Silicon optomechanics
optical frequency modulation (FM)
Online Access:https://ieeexplore.ieee.org/document/6251993/

Internet

https://ieeexplore.ieee.org/document/6251993/

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