Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition

Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition

Abstract Characteristics of atomic layer deposition (ALD)-grown ZnO thin films on sapphire substrates with and without three-pulsed ozone (O3) as oxidant precursor and post-deposition thermal annealing (TA) are investigated. Deposition temperature and thickness of ZnO epilayers are 180 °C and 85 nm,...

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Bibliographic Details
Main Authors: Yung-Chen Cheng, Hsiang-Chen Wang, Shih-Wei Feng, Tsai-Pei Li, Siu-Keung Fung, Kai-Yun Yuan, Miin-Jang Chen
Format: Article
Language:English
Published: SpringerOpen 2020-07-01
Series:Nanoscale Research Letters
Subjects:
Zinc oxide
Atomic layer deposition
Strain relaxation
Ozone precursor
Thermal annealing
Photoluminescence
Online Access:http://link.springer.com/article/10.1186/s11671-020-03382-1

Internet

http://link.springer.com/article/10.1186/s11671-020-03382-1

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