Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition
Abstract Characteristics of atomic layer deposition (ALD)-grown ZnO thin films on sapphire substrates with and without three-pulsed ozone (O3) as oxidant precursor and post-deposition thermal annealing (TA) are investigated. Deposition temperature and thickness of ZnO epilayers are 180 °C and 85 nm,...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2020-07-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-020-03382-1 |
| _version_ | 1827835939477520384 |
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| author | Yung-Chen Cheng Hsiang-Chen Wang Shih-Wei Feng Tsai-Pei Li Siu-Keung Fung Kai-Yun Yuan Miin-Jang Chen |
| author_facet | Yung-Chen Cheng Hsiang-Chen Wang Shih-Wei Feng Tsai-Pei Li Siu-Keung Fung Kai-Yun Yuan Miin-Jang Chen |
| author_sort | Yung-Chen Cheng |
| collection | DOAJ |
| description | Abstract Characteristics of atomic layer deposition (ALD)-grown ZnO thin films on sapphire substrates with and without three-pulsed ozone (O3) as oxidant precursor and post-deposition thermal annealing (TA) are investigated. Deposition temperature and thickness of ZnO epilayers are 180 °C and 85 nm, respectively. Post-deposition thermal annealing is conducted at 300 °C in the ambience of oxygen (O2) for 1 h. With strong oxidizing agent O3 and post-deposition TA in growing ZnO, intrinsic strain and stress are reduced to 0.49% and 2.22 GPa, respectively, with extremely low background electron concentration (9.4 × 1015 cm−3). This is originated from a lower density of thermally activated defects in the analyses of thermal quenching of the integrated intensity of photoluminescence (PL) spectra. TA further facilitates recrystallization forming more defect-free grains and then reduces strain and stress state causing a remarkable decrease of electron concentration and melioration of surface roughness. |
| first_indexed | 2024-03-12T06:18:27Z |
| format | Article |
| id | doaj.art-19feea5a763740228aed1efc5ee81fc4 |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T06:18:27Z |
| publishDate | 2020-07-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-19feea5a763740228aed1efc5ee81fc42023-09-03T02:23:27ZengSpringerOpenNanoscale Research Letters1556-276X2020-07-011511710.1186/s11671-020-03382-1Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer DepositionYung-Chen Cheng0Hsiang-Chen Wang1Shih-Wei Feng2Tsai-Pei Li3Siu-Keung Fung4Kai-Yun Yuan5Miin-Jang Chen6Department of Materials Science, National University of TainanDepartment of Mechanical Engineering and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng UniversityDepartment of Applied Physics, National University of KaohsiungDepartment of Materials Science, National University of TainanDepartment of Applied Physics, National University of KaohsiungDepartment of Materials Science and Engineering, National Taiwan UniversityDepartment of Materials Science and Engineering, National Taiwan UniversityAbstract Characteristics of atomic layer deposition (ALD)-grown ZnO thin films on sapphire substrates with and without three-pulsed ozone (O3) as oxidant precursor and post-deposition thermal annealing (TA) are investigated. Deposition temperature and thickness of ZnO epilayers are 180 °C and 85 nm, respectively. Post-deposition thermal annealing is conducted at 300 °C in the ambience of oxygen (O2) for 1 h. With strong oxidizing agent O3 and post-deposition TA in growing ZnO, intrinsic strain and stress are reduced to 0.49% and 2.22 GPa, respectively, with extremely low background electron concentration (9.4 × 1015 cm−3). This is originated from a lower density of thermally activated defects in the analyses of thermal quenching of the integrated intensity of photoluminescence (PL) spectra. TA further facilitates recrystallization forming more defect-free grains and then reduces strain and stress state causing a remarkable decrease of electron concentration and melioration of surface roughness.http://link.springer.com/article/10.1186/s11671-020-03382-1Zinc oxideAtomic layer depositionStrain relaxationOzone precursorThermal annealingPhotoluminescence |
| spellingShingle | Yung-Chen Cheng Hsiang-Chen Wang Shih-Wei Feng Tsai-Pei Li Siu-Keung Fung Kai-Yun Yuan Miin-Jang Chen Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition Nanoscale Research Letters Zinc oxide Atomic layer deposition Strain relaxation Ozone precursor Thermal annealing Photoluminescence |
| title | Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition |
| title_full | Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition |
| title_fullStr | Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition |
| title_full_unstemmed | Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition |
| title_short | Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition |
| title_sort | co dosing ozone and deionized water as oxidant precursors of zno thin film growth by atomic layer deposition |
| topic | Zinc oxide Atomic layer deposition Strain relaxation Ozone precursor Thermal annealing Photoluminescence |
| url | http://link.springer.com/article/10.1186/s11671-020-03382-1 |
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