Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces

Abstract Atom probes generate three‐dimensional atomic‐scale tomographies of material volumes corresponding to the size of modern‐day solid‐state devices. Here, the capabilities of atom probe tomography are evaluated to analyze buried interfaces in semiconductor heterostructures relevant for electro...

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Détails bibliographiques
Auteurs principaux: Sebastian Koelling, Lucas E. A. Stehouwer, Brian Paquelet Wuetz, Giordano Scappucci, Oussama Moutanabbir
Format: Article
Langue:English
Publié: Wiley-VCH 2023-01-01
Collection:Advanced Materials Interfaces
Sujets:
Accès en ligne:https://doi.org/10.1002/admi.202201189