Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces

Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces

Abstract Atom probes generate three‐dimensional atomic‐scale tomographies of material volumes corresponding to the size of modern‐day solid‐state devices. Here, the capabilities of atom probe tomography are evaluated to analyze buried interfaces in semiconductor heterostructures relevant for electro...

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Bibliographic Details
Main Authors: Sebastian Koelling, Lucas E. A. Stehouwer, Brian Paquelet Wuetz, Giordano Scappucci, Oussama Moutanabbir
Format: Article
Language:English
Published: Wiley-VCH 2023-01-01
Series:Advanced Materials Interfaces
Subjects:
atom probe tomography
atomic scale microscopy
epitaxial interfaces
semiconductor heterostructures
Online Access:https://doi.org/10.1002/admi.202201189

Internet

https://doi.org/10.1002/admi.202201189

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