Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces
Abstract Atom probes generate three‐dimensional atomic‐scale tomographies of material volumes corresponding to the size of modern‐day solid‐state devices. Here, the capabilities of atom probe tomography are evaluated to analyze buried interfaces in semiconductor heterostructures relevant for electro...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-01-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202201189 |
| _version_ | 1797730858078044160 |
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| author | Sebastian Koelling Lucas E. A. Stehouwer Brian Paquelet Wuetz Giordano Scappucci Oussama Moutanabbir |
| author_facet | Sebastian Koelling Lucas E. A. Stehouwer Brian Paquelet Wuetz Giordano Scappucci Oussama Moutanabbir |
| author_sort | Sebastian Koelling |
| collection | DOAJ |
| description | Abstract Atom probes generate three‐dimensional atomic‐scale tomographies of material volumes corresponding to the size of modern‐day solid‐state devices. Here, the capabilities of atom probe tomography are evaluated to analyze buried interfaces in semiconductor heterostructures relevant for electronic and quantum devices. Employing brute‐force search, the current dominant reconstruction protocol to generate tomographic three‐dimensional images from Atom Probe data is advanced to its limits. Using Si/SiGe heterostructure for qubits as a model system, the authors show that it is possible to extract interface properties like roughness and width that agree with transmission electron microscopy observations on the sub‐nanometer scale in an automated and highly reproducible manner. The demonstrated approach is a versatile method for atomic‐scale characterization of buried interfaces in semiconductor heterostructures. |
| first_indexed | 2024-03-12T11:50:18Z |
| format | Article |
| id | doaj.art-1a39ae026e9d41e3bc0b68c680f66182 |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T11:50:18Z |
| publishDate | 2023-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-1a39ae026e9d41e3bc0b68c680f661822023-08-31T08:56:33ZengWiley-VCHAdvanced Materials Interfaces2196-73502023-01-01103n/an/a10.1002/admi.202201189Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor HeterointerfacesSebastian Koelling0Lucas E. A. Stehouwer1Brian Paquelet Wuetz2Giordano Scappucci3Oussama Moutanabbir4Department of Engineering Physics École Polytechnique de Montréal Succursale Centre‐Ville Montréal H3C 3A7 CanadaQuTech and Kavli Institute of Nanoscience Delft University of Technology Delft 2600 GA The NetherlandsQuTech and Kavli Institute of Nanoscience Delft University of Technology Delft 2600 GA The NetherlandsQuTech and Kavli Institute of Nanoscience Delft University of Technology Delft 2600 GA The NetherlandsDepartment of Engineering Physics École Polytechnique de Montréal Succursale Centre‐Ville Montréal H3C 3A7 CanadaAbstract Atom probes generate three‐dimensional atomic‐scale tomographies of material volumes corresponding to the size of modern‐day solid‐state devices. Here, the capabilities of atom probe tomography are evaluated to analyze buried interfaces in semiconductor heterostructures relevant for electronic and quantum devices. Employing brute‐force search, the current dominant reconstruction protocol to generate tomographic three‐dimensional images from Atom Probe data is advanced to its limits. Using Si/SiGe heterostructure for qubits as a model system, the authors show that it is possible to extract interface properties like roughness and width that agree with transmission electron microscopy observations on the sub‐nanometer scale in an automated and highly reproducible manner. The demonstrated approach is a versatile method for atomic‐scale characterization of buried interfaces in semiconductor heterostructures.https://doi.org/10.1002/admi.202201189atom probe tomographyatomic scale microscopyepitaxial interfacessemiconductor heterostructures |
| spellingShingle | Sebastian Koelling Lucas E. A. Stehouwer Brian Paquelet Wuetz Giordano Scappucci Oussama Moutanabbir Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces Advanced Materials Interfaces atom probe tomography atomic scale microscopy epitaxial interfaces semiconductor heterostructures |
| title | Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces |
| title_full | Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces |
| title_fullStr | Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces |
| title_full_unstemmed | Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces |
| title_short | Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces |
| title_sort | three dimensional atomic scale tomography of buried semiconductor heterointerfaces |
| topic | atom probe tomography atomic scale microscopy epitaxial interfaces semiconductor heterostructures |
| url | https://doi.org/10.1002/admi.202201189 |
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