Evolution of wetting layer in InAs/GaAs quantum dot system

Evolution of wetting layer in InAs/GaAs quantum dot system

<p>Abstract</p><p>For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy- and light-hole in the WL have been distinguished in RD...

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Bibliographic Details
Main Authors: Chen YH, Ye XL, Wang ZG
Format: Article
Language:English
Published: SpringerOpen 2006-01-01
Series:Nanoscale Research Letters
Subjects:
Quantum dots
Wetting layer
Reflectance difference spectroscopy
Segregation
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Online Access:http://dx.doi.org/10.1007/s11671-006-9013-9

Internet

http://dx.doi.org/10.1007/s11671-006-9013-9

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