Evolution of wetting layer in InAs/GaAs quantum dot system
<p>Abstract</p><p>For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy- and light-hole in the WL have been distinguished in RD...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2006-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-006-9013-9 |
| _version_ | 1797712314055524352 |
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| author | Chen YH Ye XL Wang ZG |
| author_facet | Chen YH Ye XL Wang ZG |
| author_sort | Chen YH |
| collection | DOAJ |
| description | <p>Abstract</p><p>For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy- and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects, a model has been presented to deduce the InAs amount in the WL and the segregation coefficient of the indium atoms from the transition energies of heavy- and light-holes. The variation of the InAs amount in the WL and the segregation coefficient are found to rely closely on the growth modes. In addition, the huge dots also exhibits a strong effect on the evolution of the WL. The observed linear dependence of In segregation coefficient upon the InAs amount in the WL demonstrates that the segregation is enhanced by the strain in the WL.</p> |
| first_indexed | 2024-03-12T07:19:54Z |
| format | Article |
| id | doaj.art-1a706ff95d404690ae4113d2c39839be |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T07:19:54Z |
| publishDate | 2006-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-1a706ff95d404690ae4113d2c39839be2023-09-02T22:30:27ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2006-01-01117983Evolution of wetting layer in InAs/GaAs quantum dot systemChen YHYe XLWang ZG<p>Abstract</p><p>For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy- and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects, a model has been presented to deduce the InAs amount in the WL and the segregation coefficient of the indium atoms from the transition energies of heavy- and light-holes. The variation of the InAs amount in the WL and the segregation coefficient are found to rely closely on the growth modes. In addition, the huge dots also exhibits a strong effect on the evolution of the WL. The observed linear dependence of In segregation coefficient upon the InAs amount in the WL demonstrates that the segregation is enhanced by the strain in the WL.</p>http://dx.doi.org/10.1007/s11671-006-9013-9Quantum dotsWetting layerReflectance difference spectroscopySegregation78.67.Hc68.65.Hb73.21.Fg |
| spellingShingle | Chen YH Ye XL Wang ZG Evolution of wetting layer in InAs/GaAs quantum dot system Nanoscale Research Letters Quantum dots Wetting layer Reflectance difference spectroscopy Segregation 78.67.Hc 68.65.Hb 73.21.Fg |
| title | Evolution of wetting layer in InAs/GaAs quantum dot system |
| title_full | Evolution of wetting layer in InAs/GaAs quantum dot system |
| title_fullStr | Evolution of wetting layer in InAs/GaAs quantum dot system |
| title_full_unstemmed | Evolution of wetting layer in InAs/GaAs quantum dot system |
| title_short | Evolution of wetting layer in InAs/GaAs quantum dot system |
| title_sort | evolution of wetting layer in inas gaas quantum dot system |
| topic | Quantum dots Wetting layer Reflectance difference spectroscopy Segregation 78.67.Hc 68.65.Hb 73.21.Fg |
| url | http://dx.doi.org/10.1007/s11671-006-9013-9 |
| work_keys_str_mv | AT chenyh evolutionofwettinglayerininasgaasquantumdotsystem AT yexl evolutionofwettinglayerininasgaasquantumdotsystem AT wangzg evolutionofwettinglayerininasgaasquantumdotsystem |