Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions
In this study, 4H-SiC p–n junctions were irradiated with 700 keV He<sup>+</sup> ions in the fluence range 1.0 × 10<sup>12</sup> to 1.0 × 10<sup>15</sup> ions/cm<sup>2</sup>. The effects of irradiation were investigated by current–voltage (I–V) and capa...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-04-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/14/8/1966 |