InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through application of an InGaN/GaN base layer scheme to ame...

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Bibliographic Details
Main Authors: Ryan C. White, Hongjian Li, Michel Khoury, Cheyenne Lynsky, Michael Iza, Stacia Keller, David Sotta, Shuji Nakamura, Steven P. DenBaars
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Crystals
Subjects:
MOCVD
InGaN
EQE
red
long wavelength
microLED
Online Access:https://www.mdpi.com/2073-4352/11/11/1364

Internet

https://www.mdpi.com/2073-4352/11/11/1364

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