InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates
In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through application of an InGaN/GaN base layer scheme to ame...
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MDPI AG
2021-11-01
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| Online Access: | https://www.mdpi.com/2073-4352/11/11/1364 |
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| author | Ryan C. White Hongjian Li Michel Khoury Cheyenne Lynsky Michael Iza Stacia Keller David Sotta Shuji Nakamura Steven P. DenBaars |
| author_facet | Ryan C. White Hongjian Li Michel Khoury Cheyenne Lynsky Michael Iza Stacia Keller David Sotta Shuji Nakamura Steven P. DenBaars |
| author_sort | Ryan C. White |
| collection | DOAJ |
| description | In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through application of an InGaN/GaN base layer scheme to ameliorate high defect density and maintain appropriate lattice constant throughout the growth, high-In quantum wells (QWs) can be grown with improved crystal quality. Improvement to the design of the growth scheme also yields higher power output resulting in an increase to the external quantum efficiency (EQE). Combined, these two improvements allow for an 80 × 80 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula> microLED device emitting at 609 nm to achieve 0.83% EQE. Furthermore, the true In content of the QW is measured using atomic probe tomography (APT) to confirm the improved In incorporation during high temperature active region growth. These developments represent advancement toward the realization of bright, highly efficient red III-nitride LEDs to be used in RGB applications under one material system. |
| first_indexed | 2024-03-10T05:35:06Z |
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| id | doaj.art-1ac36cc91cfa4fbb99c2ac67bbdfa340 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T05:35:06Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-1ac36cc91cfa4fbb99c2ac67bbdfa3402023-11-22T22:58:31ZengMDPI AGCrystals2073-43522021-11-011111136410.3390/cryst11111364InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed SubstratesRyan C. White0Hongjian Li1Michel Khoury2Cheyenne Lynsky3Michael Iza4Stacia Keller5David Sotta6Shuji Nakamura7Steven P. DenBaars8Materials Department, University of California Santa Barbara, Santa Barbara, CA 93106, USAMaterials Department, University of California Santa Barbara, Santa Barbara, CA 93106, USAMaterials Department, University of California Santa Barbara, Santa Barbara, CA 93106, USAMaterials Department, University of California Santa Barbara, Santa Barbara, CA 93106, USAMaterials Department, University of California Santa Barbara, Santa Barbara, CA 93106, USADepartment of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USASoitec S.A., F-38190 Bernin, FranceMaterials Department, University of California Santa Barbara, Santa Barbara, CA 93106, USAMaterials Department, University of California Santa Barbara, Santa Barbara, CA 93106, USAIn this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through application of an InGaN/GaN base layer scheme to ameliorate high defect density and maintain appropriate lattice constant throughout the growth, high-In quantum wells (QWs) can be grown with improved crystal quality. Improvement to the design of the growth scheme also yields higher power output resulting in an increase to the external quantum efficiency (EQE). Combined, these two improvements allow for an 80 × 80 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mn>2</mn></msup></semantics></math></inline-formula> microLED device emitting at 609 nm to achieve 0.83% EQE. Furthermore, the true In content of the QW is measured using atomic probe tomography (APT) to confirm the improved In incorporation during high temperature active region growth. These developments represent advancement toward the realization of bright, highly efficient red III-nitride LEDs to be used in RGB applications under one material system.https://www.mdpi.com/2073-4352/11/11/1364MOCVDInGaNEQEredlong wavelengthmicroLED |
| spellingShingle | Ryan C. White Hongjian Li Michel Khoury Cheyenne Lynsky Michael Iza Stacia Keller David Sotta Shuji Nakamura Steven P. DenBaars InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates Crystals MOCVD InGaN EQE red long wavelength microLED |
| title | InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates |
| title_full | InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates |
| title_fullStr | InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates |
| title_full_unstemmed | InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates |
| title_short | InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates |
| title_sort | ingan based microled devices approaching 1 eqe with red 609 nm electroluminescence on semi relaxed substrates |
| topic | MOCVD InGaN EQE red long wavelength microLED |
| url | https://www.mdpi.com/2073-4352/11/11/1364 |
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