A Universal Method for Extracting and Quantitatively Analyzing Bias‐Dependent Contact Resistance in Carbon‐Nanotube Thin‐Film Transistors
Abstract A single‐device method is reported for extracting gate‐ and/or drain‐voltage‐dependent contact resistance of thin‐film transistors (TFTs). An extended transition‐voltage method is proposed and verified by experiments of all‐carbon‐nanotube thin‐film transistors (ACNT‐TFTs), which can extrac...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-03-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202201148 |