Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/...

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Bibliographic Details
Main Authors: Ruinan Wu, Yueguo Hu, Peisen Li, Junping Peng, Jiafei Hu, Ming Yang, Dixiang Chen, Yanrui Guo, Qi Zhang, Xiangnan Xie, Jiayu Dai, Weicheng Qiu, Guang Wang, Mengchun Pan
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Nanomaterials
Subjects:
graphene
monolayer
single-crystal
heterostructure
epitaxial growth
ambient pressure chemical vapor deposition (APCVD)
Online Access:https://www.mdpi.com/2079-4991/11/11/3112

Internet

https://www.mdpi.com/2079-4991/11/11/3112

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