Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping

Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping

Developing controllable doping processes for two-dimensional (2D) semiconductors is critical to developing next-generation electronic and optoelectronic devices. Understanding the nature of the contacts is an essential step in realizing efficient charge injection in transition metal dichalcogenides....

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Bibliographic Details
Main Authors: Siyuan Zhang, Hsun- Jen Chuang, Son T. Le, Curt A. Richter, Kathleen M. McCreary, Berend T. Jonker, Angela R. Hight Walker, Christina A. Hacker
Format: Article
Language:English
Published: AIP Publishing LLC 2022-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0101033

Internet

http://dx.doi.org/10.1063/5.0101033

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