Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping
Developing controllable doping processes for two-dimensional (2D) semiconductors is critical to developing next-generation electronic and optoelectronic devices. Understanding the nature of the contacts is an essential step in realizing efficient charge injection in transition metal dichalcogenides....
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0101033 |