A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly varies and undulates in space across the entire syste...

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Bibliographic Details
Main Authors: Mischa Thesberg, Franz Schanovsky, Ying Zhao, Markus Karner, Jose Maria Gonzalez-Medina, Zlatan Stanojević, Adrian Chasin, Gerhard Rzepa
Format: Article
Language:English
Published: MDPI AG 2024-06-01
Series:Micromachines
Subjects:
indium gallium zinc oxide
TCAD
a-IGZO
semiconductor modeling
amorphous semiconductors
disordered materials
Online Access:https://www.mdpi.com/2072-666X/15/7/829

Internet

https://www.mdpi.com/2072-666X/15/7/829

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