Drift of two-dimensional vacancy islands on the Si(100) surface under electromigration conditions

Drift of two-dimensional vacancy islands on the Si(100) surface under electromigration conditions

The paper presents an experimental study of morphological changes of the Si(100) surface under electromigration conditions that was carried out using the in situ method involving ultrahigh vacuum reflection electron microscopy. The study aims to determine the temperature dependence of the effective...

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Bibliographic Details
Main Authors: Iuliia A. Vorontsova, Sergey V. Sitnikov
Format: Article
Language:English
Published: Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University) 2021-10-01
Series:Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki
Subjects:
silicon surface
electromigration
effective charge
ultrahigh vacuum reflection electron microscopy
Online Access:https://ntv.ifmo.ru/file/article/20742.pdf

Internet

https://ntv.ifmo.ru/file/article/20742.pdf

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