Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy
Surfaces of thin oxide films were investigated by means of a dual mode NC-AFM/STM. Apart from imaging the surface termination by NC-AFM with atomic resolution, point defects in magnesium oxide on Ag(001) and line defects in aluminum oxide on NiAl(110), respectively, were thoroughly studied. The conta...
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Format: | Article |
Language: | English |
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Beilstein-Institut
2011-01-01
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Series: | Beilstein Journal of Nanotechnology |
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Online Access: | https://doi.org/10.3762/bjnano.2.1 |
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author | Thomas König Georg H. Simon Lars Heinke Leonid Lichtenstein Markus Heyde |
author_facet | Thomas König Georg H. Simon Lars Heinke Leonid Lichtenstein Markus Heyde |
author_sort | Thomas König |
collection | DOAJ |
description | Surfaces of thin oxide films were investigated by means of a dual mode NC-AFM/STM. Apart from imaging the surface termination by NC-AFM with atomic resolution, point defects in magnesium oxide on Ag(001) and line defects in aluminum oxide on NiAl(110), respectively, were thoroughly studied. The contact potential was determined by Kelvin probe force microscopy (KPFM) and the electronic structure by scanning tunneling spectroscopy (STS). On magnesium oxide, different color centers, i.e., F0, F+, F2+ and divacancies, have different effects on the contact potential. These differences enabled classification and unambiguous differentiation by KPFM. True atomic resolution shows the topography at line defects in aluminum oxide. At these domain boundaries, STS and KPFM verify F2+-like centers, which have been predicted by density functional theory calculations. Thus, by determining the contact potential and the electronic structure with a spatial resolution in the nanometer range, NC-AFM and STM can be successfully applied on thin oxide films beyond imaging the topography of the surface atoms. |
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id | doaj.art-1b74d8849fcf453399ead268d359938b |
institution | Directory Open Access Journal |
issn | 2190-4286 |
language | English |
last_indexed | 2024-12-11T16:32:09Z |
publishDate | 2011-01-01 |
publisher | Beilstein-Institut |
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series | Beilstein Journal of Nanotechnology |
spelling | doaj.art-1b74d8849fcf453399ead268d359938b2022-12-22T00:58:35ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862011-01-012111410.3762/bjnano.2.12190-4286-2-1Defects in oxide surfaces studied by atomic force and scanning tunneling microscopyThomas König0Georg H. Simon1Lars Heinke2Leonid Lichtenstein3Markus Heyde4Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, GermanyFritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, GermanyFritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, GermanyFritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, GermanyFritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, GermanySurfaces of thin oxide films were investigated by means of a dual mode NC-AFM/STM. Apart from imaging the surface termination by NC-AFM with atomic resolution, point defects in magnesium oxide on Ag(001) and line defects in aluminum oxide on NiAl(110), respectively, were thoroughly studied. The contact potential was determined by Kelvin probe force microscopy (KPFM) and the electronic structure by scanning tunneling spectroscopy (STS). On magnesium oxide, different color centers, i.e., F0, F+, F2+ and divacancies, have different effects on the contact potential. These differences enabled classification and unambiguous differentiation by KPFM. True atomic resolution shows the topography at line defects in aluminum oxide. At these domain boundaries, STS and KPFM verify F2+-like centers, which have been predicted by density functional theory calculations. Thus, by determining the contact potential and the electronic structure with a spatial resolution in the nanometer range, NC-AFM and STM can be successfully applied on thin oxide films beyond imaging the topography of the surface atoms.https://doi.org/10.3762/bjnano.2.1aluminum oxidecharge statecontact potentialdefectsdomain boundariesdynamic force microscopyfrequency modulation atomic force microscopyKelvin probe force microscopymagnesium oxidenon-contact atomic force microscopyscanning tunneling microscopythin filmswork function |
spellingShingle | Thomas König Georg H. Simon Lars Heinke Leonid Lichtenstein Markus Heyde Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy Beilstein Journal of Nanotechnology aluminum oxide charge state contact potential defects domain boundaries dynamic force microscopy frequency modulation atomic force microscopy Kelvin probe force microscopy magnesium oxide non-contact atomic force microscopy scanning tunneling microscopy thin films work function |
title | Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy |
title_full | Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy |
title_fullStr | Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy |
title_full_unstemmed | Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy |
title_short | Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy |
title_sort | defects in oxide surfaces studied by atomic force and scanning tunneling microscopy |
topic | aluminum oxide charge state contact potential defects domain boundaries dynamic force microscopy frequency modulation atomic force microscopy Kelvin probe force microscopy magnesium oxide non-contact atomic force microscopy scanning tunneling microscopy thin films work function |
url | https://doi.org/10.3762/bjnano.2.1 |
work_keys_str_mv | AT thomaskonig defectsinoxidesurfacesstudiedbyatomicforceandscanningtunnelingmicroscopy AT georghsimon defectsinoxidesurfacesstudiedbyatomicforceandscanningtunnelingmicroscopy AT larsheinke defectsinoxidesurfacesstudiedbyatomicforceandscanningtunnelingmicroscopy AT leonidlichtenstein defectsinoxidesurfacesstudiedbyatomicforceandscanningtunnelingmicroscopy AT markusheyde defectsinoxidesurfacesstudiedbyatomicforceandscanningtunnelingmicroscopy |