Topological phenomena at the oxide interfaces
Topological phenomena at the oxide interfaces attract the scientific community for the fertile ground of exotic physical properties and highly favorable applications in the area of high-density low-energy nonvolatile memory and spintronic devices. Synthesis of atomically controlled ultrathin high-qu...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2023-01-01
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| Series: | Materials for Quantum Technology |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2633-4356/acbcba |