Effects of surface activation time on Si-Si direct wafer bonding at room temperature
Surface activated bonding (SAB) based on argon ion beam irradiation was used to directly bond Si and Si wafers at room temperature, and the effects of the surface activation time on the Si-Si bonding were investigated. The experimental results show that the surface activation treatment with a proper...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac1aec |