A Subthreshold Biased CMOS Ring Oscillator Model Design in 180-nm Process

A Subthreshold Biased CMOS Ring Oscillator Model Design in 180-nm Process

In this paper, a 180-nm CMOS ring oscillator design, made with halo-implanted transistors and operating in the weak inversion region, is proposed, based on an undergraduate integrated circuit design course methodology for building logic gates and comparing simulated results with reviewed literature...

Full description

Bibliographic Details
Main Authors: Vinícius Henrique Geraldo Correa, Rodrigo Aparecido da Silva Braga, Dean Bicudo Karolak, Fernanda Rodrigues Silva
Format: Article
Language:English
Published: ITB Journal Publisher 2023-08-01
Series:Journal of ICT Research and Applications
Subjects:
CMOS
halo-implanted channels
low power integrated circuits
ring oscillators
weak inversion operation
Online Access:https://journals.itb.ac.id/index.php/jictra/article/view/16725

Internet

https://journals.itb.ac.id/index.php/jictra/article/view/16725

Similar Items