A Subthreshold Biased CMOS Ring Oscillator Model Design in 180-nm Process
In this paper, a 180-nm CMOS ring oscillator design, made with halo-implanted transistors and operating in the weak inversion region, is proposed, based on an undergraduate integrated circuit design course methodology for building logic gates and comparing simulated results with reviewed literature...
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| Format: | Article |
| Language: | English |
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ITB Journal Publisher
2023-08-01
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| Series: | Journal of ICT Research and Applications |
| Subjects: | |
| Online Access: | https://journals.itb.ac.id/index.php/jictra/article/view/16725 |
| _version_ | 1797729213847961600 |
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| author | Vinícius Henrique Geraldo Correa Rodrigo Aparecido da Silva Braga Dean Bicudo Karolak Fernanda Rodrigues Silva |
| author_facet | Vinícius Henrique Geraldo Correa Rodrigo Aparecido da Silva Braga Dean Bicudo Karolak Fernanda Rodrigues Silva |
| author_sort | Vinícius Henrique Geraldo Correa |
| collection | DOAJ |
| description |
In this paper, a 180-nm CMOS ring oscillator design, made with halo-implanted transistors and operating in the weak inversion region, is proposed, based on an undergraduate integrated circuit design course methodology for building logic gates and comparing simulated results with reviewed literature data. Halo-implanted channel transistors have a steeper and less distorted voltage characteristic curve compared to uniformly doped channel ones, which makes them a more appropriate option when designing asynchronous digital integrated circuits aimed at low bias and low power. Three gate models were created using weak inversion and pull-up and pull-down networks made with halo-implanted transistors. The results of the study and simulation of the three inverter digital gate topologies showed that the NOT inverter model, as expected, had a higher frequency than the NAND and NOR inverter models. The ring oscillators made with the NOT inverter came up with an 8.25-MHz switching frequency as well as a dynamic power close to 270 nW. A comparison with other ring oscillators from previous studies is also shown.
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| first_indexed | 2024-03-12T11:25:51Z |
| format | Article |
| id | doaj.art-1c14cf141e5b465186760fd791795d0f |
| institution | Directory Open Access Journal |
| issn | 2337-5787 2338-5499 |
| language | English |
| last_indexed | 2024-03-12T11:25:51Z |
| publishDate | 2023-08-01 |
| publisher | ITB Journal Publisher |
| record_format | Article |
| series | Journal of ICT Research and Applications |
| spelling | doaj.art-1c14cf141e5b465186760fd791795d0f2023-09-01T08:00:18ZengITB Journal PublisherJournal of ICT Research and Applications2337-57872338-54992023-08-0117210.5614/itbj.ict.res.appl.2023.17.2.1A Subthreshold Biased CMOS Ring Oscillator Model Design in 180-nm ProcessVinícius Henrique Geraldo Correa0Rodrigo Aparecido da Silva Braga1Dean Bicudo Karolak2Fernanda Rodrigues Silva3Institute of Sciences and Technology, Federal University of Itajuba – Campus Itabira, Itabira-MG, 35903087, BrazilInstitute of Sciences and Technology, Federal University of Itajuba – Campus Itabira, Itabira-MG, 35903087, BrazilInstitute of Sciences and Technology, Federal University of Itajuba – Campus Itabira, Itabira-MG, 35903087, BrazilInstitute of Sciences and Technology, Federal University of Itajuba – Campus Itabira, Itabira-MG, 35903087, Brazil In this paper, a 180-nm CMOS ring oscillator design, made with halo-implanted transistors and operating in the weak inversion region, is proposed, based on an undergraduate integrated circuit design course methodology for building logic gates and comparing simulated results with reviewed literature data. Halo-implanted channel transistors have a steeper and less distorted voltage characteristic curve compared to uniformly doped channel ones, which makes them a more appropriate option when designing asynchronous digital integrated circuits aimed at low bias and low power. Three gate models were created using weak inversion and pull-up and pull-down networks made with halo-implanted transistors. The results of the study and simulation of the three inverter digital gate topologies showed that the NOT inverter model, as expected, had a higher frequency than the NAND and NOR inverter models. The ring oscillators made with the NOT inverter came up with an 8.25-MHz switching frequency as well as a dynamic power close to 270 nW. A comparison with other ring oscillators from previous studies is also shown. https://journals.itb.ac.id/index.php/jictra/article/view/16725CMOShalo-implanted channelslow power integrated circuitsring oscillatorsweak inversion operation |
| spellingShingle | Vinícius Henrique Geraldo Correa Rodrigo Aparecido da Silva Braga Dean Bicudo Karolak Fernanda Rodrigues Silva A Subthreshold Biased CMOS Ring Oscillator Model Design in 180-nm Process Journal of ICT Research and Applications CMOS halo-implanted channels low power integrated circuits ring oscillators weak inversion operation |
| title | A Subthreshold Biased CMOS Ring Oscillator Model Design in 180-nm Process |
| title_full | A Subthreshold Biased CMOS Ring Oscillator Model Design in 180-nm Process |
| title_fullStr | A Subthreshold Biased CMOS Ring Oscillator Model Design in 180-nm Process |
| title_full_unstemmed | A Subthreshold Biased CMOS Ring Oscillator Model Design in 180-nm Process |
| title_short | A Subthreshold Biased CMOS Ring Oscillator Model Design in 180-nm Process |
| title_sort | subthreshold biased cmos ring oscillator model design in 180 nm process |
| topic | CMOS halo-implanted channels low power integrated circuits ring oscillators weak inversion operation |
| url | https://journals.itb.ac.id/index.php/jictra/article/view/16725 |
| work_keys_str_mv | AT viniciushenriquegeraldocorrea asubthresholdbiasedcmosringoscillatormodeldesignin180nmprocess AT rodrigoaparecidodasilvabraga asubthresholdbiasedcmosringoscillatormodeldesignin180nmprocess AT deanbicudokarolak asubthresholdbiasedcmosringoscillatormodeldesignin180nmprocess AT fernandarodriguessilva asubthresholdbiasedcmosringoscillatormodeldesignin180nmprocess AT viniciushenriquegeraldocorrea subthresholdbiasedcmosringoscillatormodeldesignin180nmprocess AT rodrigoaparecidodasilvabraga subthresholdbiasedcmosringoscillatormodeldesignin180nmprocess AT deanbicudokarolak subthresholdbiasedcmosringoscillatormodeldesignin180nmprocess AT fernandarodriguessilva subthresholdbiasedcmosringoscillatormodeldesignin180nmprocess |