Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis
Abstract The incorporation of Si1−xGex nanowire based metal‐semiconductor‐metal (MSM) Schottky biristor allows the conceptualization and realization of low latch‐up and latch‐down voltages with retained latching window. With the aim of investigating the device governing physics and device performanc...
| Main Authors: | , , |
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| 格式: | 文件 |
| 语言: | English |
| 出版: |
Wiley
2021-11-01
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| 丛编: | IET Circuits, Devices and Systems |
| 主题: | |
| 在线阅读: | https://doi.org/10.1049/cds2.12065 |