Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic...

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Bibliographic Details
Main Authors: N. V. Volkov, A. S. Tarasov, D. A. Smolyakov, A. O. Gustaitsev, M. V. Rautskii, A. V. Lukyanenko, M. N. Volochaev, S. N. Varnakov, I. A. Yakovlev, S. G. Ovchinnikov
Format: Article
Language:English
Published: AIP Publishing LLC 2017-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4974876

Internet

http://dx.doi.org/10.1063/1.4974876

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