Ferroelectric Wide‐Bandgap Metal Halide Perovskite Field‐Effect Transistors: Toward Transparent Electronics

Ferroelectric Wide‐Bandgap Metal Halide Perovskite Field‐Effect Transistors: Toward Transparent Electronics

Abstract Transparent field‐effect transistors (FETs) are attacking intensive interest for constructing fancy “invisible” electronic products. Presently, the main technology for realizing transparent FETs is based on metal oxide semiconductors, which have wide‐bandgap but generally demand sputtering...

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Bibliographic Details
Main Authors: Jiangnan Xia, Xincan Qiu, Yu Liu, Ping‐An Chen, Jing Guo, Huan Wei, Jiaqi Ding, Haihong Xie, Yawei Lv, Fuxiang Li, Wenwu Li, Lei Liao, Yuanyuan Hu
Format: Article
Language:English
Published: Wiley 2023-04-01
Series:Advanced Science
Subjects:
ferroelectric dielectrics
field‐effect transistors
perovskite semiconductors
solution‐process
transparent electronics
Online Access:https://doi.org/10.1002/advs.202300133

Internet

https://doi.org/10.1002/advs.202300133

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