Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic Device
In this work, resistive switching and synaptic behaviors of a TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer device were studied. The deposition of Pt/Ti/TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/TiN stack was confirmed b...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-03-01
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| Series: | Metals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2075-4701/11/3/440 |