Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic Device
In this work, resistive switching and synaptic behaviors of a TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer device were studied. The deposition of Pt/Ti/TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/TiN stack was confirmed b...
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| Format: | Article |
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MDPI AG
2021-03-01
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| Series: | Metals |
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| Online Access: | https://www.mdpi.com/2075-4701/11/3/440 |
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| author | Hojeong Ryu Sungjun Kim |
| author_facet | Hojeong Ryu Sungjun Kim |
| author_sort | Hojeong Ryu |
| collection | DOAJ |
| description | In this work, resistive switching and synaptic behaviors of a TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer device were studied. The deposition of Pt/Ti/TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/TiN stack was confirmed by transmission electron microscopy (TEM) and energy X-ray dispersive spectroscopy (EDS). The initial state before the forming process followed Fowler-Nordheim (FN) tunneling. A strong electric field was applied to Al<sub>2</sub>O<sub>3</sub> with a large energy bandgap for FN tunneling, which was confirmed by the I-V fitting process. Bipolar resistive switching was conducted by the set process in a positive bias and the reset process in a negative bias. High-resistance state (HRS) followed the trap-assisted tunneling (TAT) model while low-resistance state (LRS) followed the Ohmic conduction model. Set and reset operations were verified by pulse. Moreover, potentiation and depression in the biological synapse were verified by repetitive set pulses and reset pulses. Finally, the device showed good pattern recognition accuracy (~88.8%) for a Modified National Institute of Standards and Technology (MNIST) handwritten digit database in a single layer neural network including the conductance update of the device. |
| first_indexed | 2024-03-09T05:05:43Z |
| format | Article |
| id | doaj.art-1c5cdccc289046a494a26957f5b5ca3d |
| institution | Directory Open Access Journal |
| issn | 2075-4701 |
| language | English |
| last_indexed | 2024-03-09T05:05:43Z |
| publishDate | 2021-03-01 |
| publisher | MDPI AG |
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| series | Metals |
| spelling | doaj.art-1c5cdccc289046a494a26957f5b5ca3d2023-12-03T12:54:43ZengMDPI AGMetals2075-47012021-03-0111344010.3390/met11030440Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic DeviceHojeong Ryu0Sungjun Kim1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaIn this work, resistive switching and synaptic behaviors of a TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer device were studied. The deposition of Pt/Ti/TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/TiN stack was confirmed by transmission electron microscopy (TEM) and energy X-ray dispersive spectroscopy (EDS). The initial state before the forming process followed Fowler-Nordheim (FN) tunneling. A strong electric field was applied to Al<sub>2</sub>O<sub>3</sub> with a large energy bandgap for FN tunneling, which was confirmed by the I-V fitting process. Bipolar resistive switching was conducted by the set process in a positive bias and the reset process in a negative bias. High-resistance state (HRS) followed the trap-assisted tunneling (TAT) model while low-resistance state (LRS) followed the Ohmic conduction model. Set and reset operations were verified by pulse. Moreover, potentiation and depression in the biological synapse were verified by repetitive set pulses and reset pulses. Finally, the device showed good pattern recognition accuracy (~88.8%) for a Modified National Institute of Standards and Technology (MNIST) handwritten digit database in a single layer neural network including the conductance update of the device.https://www.mdpi.com/2075-4701/11/3/440neuromorphic systemsynaptic deviceresistive switchingmetal oxidesbilayer |
| spellingShingle | Hojeong Ryu Sungjun Kim Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic Device Metals neuromorphic system synaptic device resistive switching metal oxides bilayer |
| title | Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic Device |
| title_full | Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic Device |
| title_fullStr | Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic Device |
| title_full_unstemmed | Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic Device |
| title_short | Gradually Tunable Conductance in TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Resistors for Synaptic Device |
| title_sort | gradually tunable conductance in tio sub 2 sub al sub 2 sub o sub 3 sub bilayer resistors for synaptic device |
| topic | neuromorphic system synaptic device resistive switching metal oxides bilayer |
| url | https://www.mdpi.com/2075-4701/11/3/440 |
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