Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide
The metal-insulator transition is typically controlled by carrier accumulation or chemical doping. Here, the authors realize an alternative method based on resonant tunnelling in a double quantum well structure of strongly correlated oxides, which offers practical advantages over conventional method...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2021-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-021-27327-z |