Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise

Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise

We report the design, fabrication, and test of an InGaAs avalanche photodiode (APD) for 950–1650 nm wavelength sensing applications. The APD is grown by molecular beam epitaxy on InP substrates from lattice-matched InGaAs and InAlAs alloys. Avalanche multiplication inside the APD occurs i...

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Bibliographic Details
Main Authors: George M. Williams, Madison Compton, David A. Ramirez, Majeed M. Hayat, Andrew S. Huntington
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Avalanche photodiode
optical receiver
photo detector
photon counting
Online Access:https://ieeexplore.ieee.org/document/6509920/

Internet

https://ieeexplore.ieee.org/document/6509920/

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