Unified Model for Laser Doping of Silicon from Precursors

Unified Model for Laser Doping of Silicon from Precursors

Laser doping of silicon with the help of precursors is well established in photovoltaics. Upon illumination with the constant or pulsed laser beam, the silicon melts and doping atoms from the doping precursor diffuse into the melted silicon. With the proper laser parameters, after resolidification,...

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Bibliographic Details
Main Authors: Mohamed Hassan, Morris Dahlinger, Jürgen R. Köhler, Renate Zapf-Gottwick, Jürgen H. Werner
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Materials
Subjects:
laser processing
laser doping
boron oxide properties
emitter
silicon solar cell
IBC
Online Access:https://www.mdpi.com/1996-1944/14/9/2322

Internet

https://www.mdpi.com/1996-1944/14/9/2322

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