A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap
In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, larger size, and compatibility with CMOS-fab processes....
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-03-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/14/4/764 |