Atomic-Level Sn Doping Effect in Ga<sub>2</sub>O<sub>3</sub> Films Using Plasma-Enhanced Atomic Layer Deposition

Atomic-Level Sn Doping Effect in Ga<sub>2</sub>O<sub>3</sub> Films Using Plasma-Enhanced Atomic Layer Deposition

In this work, the atomic level doping of Sn into Ga<sub>2</sub>O<sub>3</sub> films was successfully deposited by using a plasma-enhanced atomic layer deposition method. Here, we systematically studied the changes in the chemical state, microstructure evolution, optical proper...

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Bibliographic Details
Main Authors: Yi Shen, Hong-Ping Ma, Lin Gu, Jie Zhang, Wei Huang, Jing-Tao Zhu, Qing-Chun Zhang
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Nanomaterials
Subjects:
Ga<sub>2</sub>O<sub>3</sub> film
Sn doping
plasma-enhanced atomic layer deposition
X-ray photoelectron spectroscopy
energy band alignment
electrical properties
Online Access:https://www.mdpi.com/2079-4991/12/23/4256

Internet

https://www.mdpi.com/2079-4991/12/23/4256

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