Atomic-Level Sn Doping Effect in Ga<sub>2</sub>O<sub>3</sub> Films Using Plasma-Enhanced Atomic Layer Deposition

Atomic-Level Sn Doping Effect in Ga<sub>2</sub>O<sub>3</sub> Films Using Plasma-Enhanced Atomic Layer Deposition

In this work, the atomic level doping of Sn into Ga<sub>2</sub>O<sub>3</sub> films was successfully deposited by using a plasma-enhanced atomic layer deposition method. Here, we systematically studied the changes in the chemical state, microstructure evolution, optical proper...

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Bibliographic Details
Main Authors:	Yi Shen, Hong-Ping Ma, Lin Gu, Jie Zhang, Wei Huang, Jing-Tao Zhu, Qing-Chun Zhang
Format:	Article
Language:	English
Published:	MDPI AG 2022-11-01
Series:	Nanomaterials
Subjects:	Ga<sub>2</sub>O<sub>3</sub> film Sn doping plasma-enhanced atomic layer deposition X-ray photoelectron spectroscopy energy band alignment electrical properties
Online Access:	https://www.mdpi.com/2079-4991/12/23/4256

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