Branched High Aspect Ratio Nanostructures Fabricated by Focused Helium Ion Beam Induced Deposition of an Insulator

Branched High Aspect Ratio Nanostructures Fabricated by Focused Helium Ion Beam Induced Deposition of an Insulator

Helium ion beam induced deposition using the gaseous precursor pentamethylcyclopentasiloxane is employed to fabricate high aspect ratio insulator nanostructures (nanopillars and nanocylinders) that exhibit charge induced branching. The branched nanostructures are analyzed by transmission electron mi...

Deskribapen osoa

Xehetasun bibliografikoak
Egile nagusia: Frances I. Allen
Formatua: Artikulua
Hizkuntza:English
Argitaratua: MDPI AG 2021-02-01
Saila:Micromachines
Gaiak:
focused ion beam induced deposition
helium ion microscope
nanopillar
Sarrera elektronikoa:https://www.mdpi.com/2072-666X/12/3/232

Internet

https://www.mdpi.com/2072-666X/12/3/232

Antzeko izenburuak