A 5.67 ENOB Vector Matrix Multiplier with Charge Storage FET Cells and Non-Linearity Compensation Techniques

A 5.67 ENOB Vector Matrix Multiplier with Charge Storage FET Cells and Non-Linearity Compensation Techniques

In this paper, we provide a thorough analysis and enhancement techniques of the linearity between the input voltage and output current in charge storage field effect transistor (FET) cells for a vector–matrix multiplier array in neural networks. A planar floating gate FET cell revealed superior line...

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Bibliographic Details
Main Authors: Jin-Young Hwang, Young-Taek Ryu, Kee-Won Kwon
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Electronics
Subjects:
neural network
in-memory computing
charge trap FET
linearity
floating gate FET
planar EEPROM
Online Access:https://www.mdpi.com/2079-9292/11/18/2911

Internet

https://www.mdpi.com/2079-9292/11/18/2911

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