Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

While silicon has been a steadfast semiconductor material for the past 50 years, it is now facing competition from other materials, especially for detector design. In that respect, due to its high resistance to radiation damage, silicon carbide is one of the most promising materials. In this work, w...

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Bibliographic Details
Main Authors: Carmen Altana, Lucia Calcagno, Caterina Ciampi, Francesco La Via, Gaetano Lanzalone, Annamaria Muoio, Gabriele Pasquali, Domenico Pellegrino, Sebastiana Puglia, Giuseppe Rapisarda, Salvatore Tudisco
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Sensors
Subjects:
radiation hardness
silicon
silicon carbide
collection efficiency
energy resolution
defects
Online Access:https://www.mdpi.com/1424-8220/23/14/6522

Internet

https://www.mdpi.com/1424-8220/23/14/6522

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