Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors
While silicon has been a steadfast semiconductor material for the past 50 years, it is now facing competition from other materials, especially for detector design. In that respect, due to its high resistance to radiation damage, silicon carbide is one of the most promising materials. In this work, w...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-07-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/23/14/6522 |
| _version_ | 1797587494044172288 |
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| author | Carmen Altana Lucia Calcagno Caterina Ciampi Francesco La Via Gaetano Lanzalone Annamaria Muoio Gabriele Pasquali Domenico Pellegrino Sebastiana Puglia Giuseppe Rapisarda Salvatore Tudisco |
| author_facet | Carmen Altana Lucia Calcagno Caterina Ciampi Francesco La Via Gaetano Lanzalone Annamaria Muoio Gabriele Pasquali Domenico Pellegrino Sebastiana Puglia Giuseppe Rapisarda Salvatore Tudisco |
| author_sort | Carmen Altana |
| collection | DOAJ |
| description | While silicon has been a steadfast semiconductor material for the past 50 years, it is now facing competition from other materials, especially for detector design. In that respect, due to its high resistance to radiation damage, silicon carbide is one of the most promising materials. In this work, we discuss the radiation damage studies of a new, large area, p-n junction silicon carbide device developed by the SiCILIA collaboration. We have studied the general performances of several devices, as a function of fluence, irradiated in different experimental conditions with different beams. A standard p-n junction silicon detector was also irradiated for comparison. The new detectors manifest excellent performance in terms of stability of the main parameters, linearity, defect distribution, charge collection efficiency, energy resolution, leakage current, etc. Experimental results evidence a radiation resistance of SiC devices more than two order of magnitude higher than Si devices. The new construction technology applied to silicon carbide material has made it possible to create very robust devices with excellent performance. These devices will soon be available for all those scientific projects where a high resistance to radiation damage is required. |
| first_indexed | 2024-03-11T00:39:44Z |
| format | Article |
| id | doaj.art-1cee41a5b1124e6293bceb16b354fc9d |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-11T00:39:44Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-1cee41a5b1124e6293bceb16b354fc9d2023-11-18T21:18:55ZengMDPI AGSensors1424-82202023-07-012314652210.3390/s23146522Radiation Damage by Heavy Ions in Silicon and Silicon Carbide DetectorsCarmen Altana0Lucia Calcagno1Caterina Ciampi2Francesco La Via3Gaetano Lanzalone4Annamaria Muoio5Gabriele Pasquali6Domenico Pellegrino7Sebastiana Puglia8Giuseppe Rapisarda9Salvatore Tudisco10Laboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, ItalyIstituto Nazionale di Fisica Nucleare (INFN)—Sezione di Catania, 95123 Catania, ItalyPhysics and Astronomy Department, Florence University, 50019 Florence, ItalyInstitute for Microelectronics and Microsystems (IMM), National Research Council (CNR), 95121 Catania, ItalyLaboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, ItalyInstitute for Microelectronics and Microsystems (IMM), National Research Council (CNR), 95121 Catania, ItalyPhysics and Astronomy Department, Florence University, 50019 Florence, ItalyPhysics and Astronomy Department, Catania University, 95123 Catania, ItalyIstituto Nazionale di Fisica Nucleare (INFN)—Sezione di Catania, 95123 Catania, ItalyLaboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, ItalyLaboratori Nazionali del Sud (LNS), Istituto Nazionale di Fisica Nucleare (INFN), 95123 Catania, ItalyWhile silicon has been a steadfast semiconductor material for the past 50 years, it is now facing competition from other materials, especially for detector design. In that respect, due to its high resistance to radiation damage, silicon carbide is one of the most promising materials. In this work, we discuss the radiation damage studies of a new, large area, p-n junction silicon carbide device developed by the SiCILIA collaboration. We have studied the general performances of several devices, as a function of fluence, irradiated in different experimental conditions with different beams. A standard p-n junction silicon detector was also irradiated for comparison. The new detectors manifest excellent performance in terms of stability of the main parameters, linearity, defect distribution, charge collection efficiency, energy resolution, leakage current, etc. Experimental results evidence a radiation resistance of SiC devices more than two order of magnitude higher than Si devices. The new construction technology applied to silicon carbide material has made it possible to create very robust devices with excellent performance. These devices will soon be available for all those scientific projects where a high resistance to radiation damage is required.https://www.mdpi.com/1424-8220/23/14/6522radiation hardnesssiliconsilicon carbidecollection efficiencyenergy resolutiondefects |
| spellingShingle | Carmen Altana Lucia Calcagno Caterina Ciampi Francesco La Via Gaetano Lanzalone Annamaria Muoio Gabriele Pasquali Domenico Pellegrino Sebastiana Puglia Giuseppe Rapisarda Salvatore Tudisco Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors Sensors radiation hardness silicon silicon carbide collection efficiency energy resolution defects |
| title | Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors |
| title_full | Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors |
| title_fullStr | Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors |
| title_full_unstemmed | Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors |
| title_short | Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors |
| title_sort | radiation damage by heavy ions in silicon and silicon carbide detectors |
| topic | radiation hardness silicon silicon carbide collection efficiency energy resolution defects |
| url | https://www.mdpi.com/1424-8220/23/14/6522 |
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