9T fast‐write SRAM bit cell with no conflicts for ultra‐low voltage
Abstract With the development of processes and reduction of transistor size, transistor sensitivity to voltage changes has increased. Traditional SRAM bit cells struggle to function properly at low voltages, and the lengthy write time necessitated by the write conflict problem will inevitably result...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-09-01
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| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/ell2.70039 |