Temperature dependence of ESD effects on 28 nm FD‐SOI MOSFETs

Temperature dependence of ESD effects on 28 nm FD‐SOI MOSFETs

Abstract The failure mechanisms caused by electrostatic discharge (ESD) effects at ambient temperatures ranging from −75 to 125°C are investigated by Silvaco TCAD simulator. The devices are NMOS transistors fabricated with 28 nm fully depleted silicon‐on‐insulator (FDSOI) technology. Results indicat...

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Bibliographic Details
Main Authors: Yiping Xiao, Chaoming Liu, Yanqing Zhang, Chunhua Qi, Guoliang Ma, Tianqi Wang, Mingxue Huo
Format: Article
Language:English
Published: Wiley 2024-03-01
Series:Engineering Reports
Subjects:
ambient temperatures
ESD effects
failure mechanisms
TCAD simulation
Online Access:https://doi.org/10.1002/eng2.12729

Internet

https://doi.org/10.1002/eng2.12729

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